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K7Q163664B10 - 512Kx36 & 1Mx18 QDRTM b4 SRAM

K7Q163664B10_6608864.PDF Datasheet


Part No.	K7Q163664B10 K7Q161864B
Description	512Kx36 & 1Mx18 QDRTM b4 SRAM
File Size	455.40K / 17 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7B161825A K7A163600A K7A163601A K7B163625A K7A161	512Kx36 & 1Mx18 Synchronous SRAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. ITT, Corp.
IS61QDP2B251236A IS61QDP2B251236A1 IS61QDP2B251236	512Kx36 and 1Mx18 configuration available	Integrated Silicon Solu...

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